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We demonstrate efficient on-chip green light generation via frequency upconversion in silicon nitride–thin-film lithium niobate (SiN-TFLN) hybrid waveguides, obtained by transfer printing LN coupons on selected areas of photonic integrated circuits (PICs). By utilizing modal phase matching (MPM), our devices achieve a high normalized conversion efficiency of 42.5% W−1cm−2in a single-pass, 2.4-mm-long waveguide configuration. The SiN–LN transition in the waveguide inherently facilitates mode conversion, transforming a higher-order second-harmonic mode into a fundamental TE mode, ensuring coherent, narrow-linewidth, green light emission. Our waveguide platform gives rise to a wavelength shift of ∼1 nm for every 10 nm of waveguide width variation and temperature-induced wavelength tuning of ∼0.02 nm/°C.more » « less
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Nikor, Sk_Shafaat_Saud; Sumon, Md_Saiful_Islam; Sankar, Shrivatch; Ma, Like; Patel, Victor_J; Hawkins, Samuel_D; Addamane, Sadhvikas_J; Arafin, Shamsul (, Applied Physics Express)Abstract The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgapp-GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ∼1013cm−2followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.more » « less
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